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許程，男，1981年生，江蘇江都人，中共黨員，工學(xué)博士，副教授，主要從事光學(xué)薄膜、納米發(fā)電機和太陽(yáng)能相關(guān)領(lǐng)域研究。主持國家自然科學(xué)青年基金、江蘇省自然科學(xué)基金面上項目、高等學(xué)校博士學(xué)科點(diǎn)專(zhuān)項科研基金新教師類(lèi)資助課題、中國博士后科學(xué)基金特別資助項目、中國博士后科學(xué)基金面上資助項目等多項國家級和省部級科研項目。主持江蘇省研究生教育教學(xué)改革研究與實(shí)踐重點(diǎn)課題和校級教學(xué)改革項目3項。入選江蘇省“六大人才高峰”高層次人才培養對象、江蘇省“青藍工程”優(yōu)秀青年骨干教師、中國礦業(yè)大學(xué)第八批校級青年學(xué)術(shù)帶頭人，優(yōu)秀拔尖教師海外訪(fǎng)問(wèn)研究項目，中國礦業(yè)大學(xué)“英才培育”工程，中國礦業(yè)大學(xué)啟航計劃等。2013年至2014年在美國佐治亞理工學(xué)院激光動(dòng)力學(xué)實(shí)驗室訪(fǎng)學(xué)。2016年至2018年在美國佐治亞理工學(xué)院王中林教授課題組訪(fǎng)學(xué)，從事納米發(fā)電機研究。以第一作者/通訊作者在A(yíng)dvanced Materials、Science Advances、Advanced Functional Materials、ACS Nano等國際知名期刊上發(fā)表論文50多篇，授權國家發(fā)明專(zhuān)利10多項，出版專(zhuān)著(zhù)1部。
教育/工作經(jīng)歷：
1999年-2003年，武漢理工大學(xué)，本科；
2003年-2006年，武漢理工大學(xué)，碩士；
2006年-2009年，中國科學(xué)院上海光學(xué)精密機械研究所，博士；
2009年-2011年，中國礦業(yè)大學(xué)，材料科學(xué)與工程學(xué)院，講師；
2011年-2014年，中國礦業(yè)大學(xué)，化工學(xué)院，博士后；
2013年-2014年，美國佐治亞理工學(xué)院，化學(xué)與生化學(xué)院激光動(dòng)力學(xué)實(shí)驗室，訪(fǎng)問(wèn)學(xué)者；
2016年-2018年，美國佐治亞理工學(xué)院，材料科學(xué)與工程學(xué)院王中林教授課題組，訪(fǎng)問(wèn)學(xué)者；
2012年至今，中國礦業(yè)大學(xué)，材料與物理學(xué)院，副教授
代表性科研項目：
[1]   國家自然科學(xué)青年基金項目，“氧化鉭薄膜激光損傷的溫度效應及機理研究（61107080）”，2012.01-2014.12。
[2]   江蘇省自然科學(xué)基金面上項目，“高閾值氧化鉭薄膜的制備與不同溫度下的激光損傷研究（BK2011223）”，2011.07-2014.07。
[3] 中國博士后科學(xué)基金面上資助項目，“1064 nm激光輻照下Ta2O5薄膜的損傷閾值研究（20110491472）”，2011.05-2013.04。
[5] 中國博士后科學(xué)基金特別資助項目（2012T50523），“極端環(huán)境下高激光損傷閾值薄膜的研制”，2013.01-2014.12。
[4] 高等學(xué)校博士學(xué)科點(diǎn)專(zhuān)項科研基金新教師類(lèi)資助課題，“Ta2O5激光薄膜的研制及高溫損傷特性探索（20110095120018）”，2012.01-2014.12。
[5] 中央高?；究蒲袠I(yè)務(wù)費專(zhuān)項資金資助項目，“高溫環(huán)境下抗激光損傷薄膜的研制及機理探索（2012QNA03）”，2012.01-2014.12。
[6] 中國礦業(yè)大學(xué)啟航計劃，“氧化物納米復合結構的制備及應用”，2009.11-2011.10。
[7] 江蘇省“第三批江蘇省高校優(yōu)秀中青年教師和校長(cháng)境外研修項目”， 2013.12-2014.11。
[8] 江蘇省“青藍工程”優(yōu)秀青年骨干教師。
[9] 中國礦業(yè)大學(xué)第八批校級青年學(xué)術(shù)帶頭人。
[10] 江蘇省“六大人才高峰”高層次人才。
[11]學(xué)科前沿科學(xué)研究專(zhuān)項，“基于同步輻射實(shí)現激光損傷的超快研究（2015XKMS065）”，2015.09-2018.08。
[12] 中國礦業(yè)大學(xué)基本科研業(yè)務(wù)費重大項目培育專(zhuān)項，2019.09-2022.08。
代表性論文：
[1]     Yongqiao Zhu, Shiquan Lin, Wenchao Gao, Miao Zhang, Chaogui Yang, Peizhong Feng, Cheng Xu*, Zhong Lin Wang*, Effects of oxygen vacancies and cation valence states on the triboelectric property of substoichiometric oxide films, ACS Appl. Mater. Inter. 2021, 13, 35795-35803.
[2]     Yongqiao Zhu, Shiquan Lin, Wenchao Gao, Miao Zhang, Dawei Li, Peizhong Feng, Cheng Xu*, Zhong Lin Wang*, Reversal of triboelectric charges on sol–gel oxide films annealed at different temperatures, Appl. Phys. Lett. 2021, 118: 243902.
[3]     Miao Zhang, Yongqiao Zhu, Dawei Li, Peizhong Feng, Cheng Xu*,An innovative method for preparation of sol-gel HfO2 films with high laser-induced damage threshold after high-temperature annealing, Appl. Surf. Sci., 2021, 554: 149615.
[4]     Ding Li#, Cheng Xu#, Yanjun Liao, Wenzhe Cai, Yongqiao Zhu, Zhong Lin Wang*, Interface inter-atomic electron-transition induced photon emission in contact-electrification，Sci. Adv., 2021; 7 : eabj0349.
[5]     Pu Zhang, Di Lin, Yongqiao Zhu, Wenzhe Cai, Dawei Li, Cheng Xu*, In-situ high temperature laser-induced damage of sol-gel Ta2O5 films with different dual additives, Thin Solid Films, 2020, 693: 137723.
[6]     Wenzhe Cai, Yingtian Yang, Yongqiao Zhu, Dawei Li, Cheng Xu*, Preparation of high laser-induced damage threshold sol-gel Nb2O5 films with different additives, Optik, 2020, 206: 164306.
[7]     Yongqiao Zhu, Ming Ma, Pu Zhang, Wenzhe Cai, Dawei Li, Cheng Xu*, Preparation of sol-gel ZrO2 films with high laser-induced damage threshold under high temperature, Opt. Express, 2019, 27: 37568-37578.
[8]     Cheng Xu, Binbin Zhang, Aurelia Chi Wang, Wenzhe Cai, Yunlong Zi, Peizhong Feng, Zhong Lin Wang, Effects of metal work function and contact potential difference on electron thermionic emission in contact electrification, Adv. Funct. Mater., 2019, 29: 1903142.
[9]     Cheng Xu, Binbin Zhang, Aurelia Chi Wang, Haiyang Zou, Guanlin Liu, Wenbo Ding, Changsheng Wu, Ming Ma, Peizhong Feng, Zhiqun Lin, Zhong Lin Wang, Contact-electrification between two identical materials: curvature effect, ACS Nano, 2019,13: 2034?2041.
[10]Cheng Xu, Aurelia Chi Wang, Haiyang Zou, Binbin Zhang, Chunli Zhang, Yunlong Zi, Lun Pan, Peihong Wang, Peizhong Feng, Zhiqun Lin, Zhong Lin Wang, Raising the working temperature of a triboelectric nanogenerator by quenching down electron thermionic emission in contact-electrification, Adv. Mater., 2018, 30: 1803968.
[11]Cheng Xu, Yunlong Zi, Aurelia Chi Wang, Haiyang Zou, Yejing Dai, Xu He, Peihong Wang, Yi-Cheng Wang, Peizhong Feng, Dawei Li, Zhong Lin Wang,On the electron-transfer mechanism in the contact-electrification effect, Adv. Mater., 2018, 30: 1706790.
[12]Di Lin, Cheng Xu*, Ming Ma, Weitong Shan, Peizhong Feng, Dawei Li, Exploration of the key parameters in sol-gel preparation of Ta2O5 films with high laser damage resistance, Optoelectron. Adv. Mat., 2017, 11: 357-363.
[13]Ming Ma, Cheng Xu*, Di Lin, Huanhuan Sun, Enzhu Lin, Peizhong Feng, Yinghuai Qiang, Dawei Li, Temperature effect on the nanosecond laser-induced damage of TiO2 films with two additives, J. Optoelectron. Adv. M., 2017, 19: 189-196.
[14]Cheng Xu, Dawei Li, Heliang Fan, Jianxin Deng, Jianwei Qi, Peng Yi, Yinghuai Qiang, Effects of different post-treatment methods on optical properties, absorption and nanosecond laser-induced damage threshold of Ta2O5 films, Thin Solid Films, 2015, 580: 12-20.
[15]Cheng Xu, Dawei Li, Heliang Fan, Jianwei Qi, Jianxin Deng, Shuai Yang, Peng Yi, Yinghuai Qiang, Laser-induced damage of Ta2O5 films obtained from TaCl5 precursor and annealed at different temperatures, Appl. Surf. Sci., 2015, 344: 137-145.
[16]Cheng Xu, Di Lin, Jinan Niu, Yinghuai Qiang, Dawei Li, Chunxian Tao, Preparation of Ta-doped TiO2 using Ta2O5 as the doping source, Chin. Phys. Lett., 2015, 32: 088102.
[17]Cheng Xu, Heliang Fan, Dawei Li, Jianwei Qi, Shuai Yang, Yinghuai Qiang, Comparative studies on the laser-induced damage of TiO2 films with different additives and thickness, Optik, 2015, 126: 5478-5482.
[18]Cheng Xu, Ming Ma, Huanhuan Sun, Di Lin, Peizhong Feng, Jianwei Qi, Yinghuai Qiang, Dawei Li, Chunxian Tao, Study on the relationship between laser-induced damage threshold and microscopic properties of Ta2O5 films by the combination of experiment and simulation, Optoelectron. Adv. Mat., 2015, 9: 1337-1341.
[19]Cheng Xu, Di Lin, Peizhong Feng, Dawei Li, Heliang Fan, Jianwei Qi, Jinan Niu, Yinghuai Qiang, Influencing factors in the laser-induced damage threshold of Ta2O5 films prepared with different methods, J. Optoelectron. Adv. M., 2015, 17: 1739-1746.
[20]Cheng Xu, Jiaojiao Jia, Di Yang, Heliang Fan, Yinghuai Qiang, Jiongtian Liu, Guohang Hu, Dawei Li, Nanosecond laser-induced damage at different initial temperatures of Ta2O5 films prepared by dual ion beam sputtering, J. Appl. Phys., 2014, 116: 053102.
[21]Cheng Xu, Peng Yi, Heliang Fan, Jianwei Qi, Shuai Yang, Yinghuai Qiang, Jiongtian Liu, Dawei Li, Preparation of high laser-induced damage threshold Ta2O5 films, Appl. Surf. Sci., 2014, 309: 194-199.
[22]Cheng Xu, Peng Yi, Heliang Fan, Jianwei Qi, Yinghuai Qiang, Jiongtian Liu, Chunxian Tao, Dawei Li, Correlations between the oxygen deficiency and the laser damage resistance of different oxide films, Appl. Surf. Sci., 2014, 289: 141-144.
[23]Cheng Xu, Shuai Yang, Zheng Wang, Jianxin Deng, Yulong Zhao, Heliang Fan, Yinghuai Qiang, Dawei Li, Laser-induced damage threshold of TiO2 films with different preparation methods and annealing temperatures, Chin. Phys. Lett., 2014, 31: 074207.
[24]Cheng Xu, Shuai Yang, Yinghuai Qiang, Jiongtian Liu, Jianyong Ma, Wide band polarization independent reflector based on guided mode resonance effect in three-level silicon-based element, Opt. Laser Technol., 2013, 45: 42-45.
[25]Cheng Xu, Shuai Yang, Yinghuai Qiang, Jiongtian Liu, Jianyong Ma, Wide band polarization independent reflector based on guided mode resonance effect in germanium grating, Optik, 2013, 124: 3033-3035.
[26]Cheng Xu, Shuai Yang, Shenghui Zhang, Jinan Liu, Yinghuai Qiang, Jiongtian Liu, Dawei Li, Temperature dependence of optical properties, chemical composition, structure and laser damage in Ta2O5 films, Chin. Phys. B, 2012, 21: 114213.
[27]Cheng Xu, Shuai Yang, Jifei Wang, Jinan Liu, Hao Ma, Yinghuai Qiang, Jiongtian Liu, Dawei Li, Chunxian Tao, Effect of oxygen vacancy on the band gap and nanosecond laser-induced damage threshold of Ta2O5 films, Chin. Phys. Lett., 2012, 29: 084207.
[28]Cheng Xu, Linmin Xu, Yinghuai Qiang, Yabo Zhu, Jiongtian Liu, Jianyong Ma, Excellent polarization independent reflector based on guided mode resonance effect, Chin. Phys. B, 2011, 20: 104210.
[29]Cheng Xu, Linmin Xu, Hanzhuo Zhang, Yinghuai Qiang, Yabo Zhu, Jiongtian Liu, Jianda Shao, Comparative studies on the laser damage resistance of Ta2O5 and Nb2O5 films performed under different electron beam currents, Chin. Phys. Lett., 2011, 28: 064211.
[30]Cheng Xu, Yulong Zhao, Yinghuai Qiang, Yabo Zhu, Litong Guo, Jianda Shao, Comparison of laser-induced damage in Ta2O5 and Nb2O5 single-layer films and high reflectors, Chin. Opt. Lett., 2011, 9: 013102.
[31]Cheng Xu, Yinghuai Qiang, Yabo Zhu, Tingting Zhai, Litong Guo, Yulong Zhao, Jianda Shao, Zhengxiu Fan, Laser-induced damage threshold at different wavelengths of Ta2O5 films annealed over a wide temperature range, Vacuum, 2010, 84: 1310-1314.
[32]Cheng Xu, Yinghuai Qiang, Yabo Zhu, Litong Guo, Jianda Shao, Zhengxiu Fan, Laser damage mechanisms of amorphous Ta2O5 films at 1064, 532 and 355 nm in 1-on-1 regime, Chin. Phys. Lett., 2010, 27: 114205.
[33]Cheng Xu, Yinghuai Qiang, Yabo Zhu, Jianda Shao, Zhengxiu Fan, Jinhong Han, Effects of deposition parameters on laser-induced damage threshold of Ta2O5 films, Opt. Laser Technol., 2010, 42: 497-502.
[34]Cheng Xu, Hongcheng Dong, Lei Yuan, Hongbo He, Jianda Shao, Zhengxiu Fan, Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films, Opt. Laser Technol., 2009, 41: 258-263.
[35]Cheng Xu, Qiling Xiao, Jianyong Ma, Yunxia Jin, Jianda Shao, Zhengxiu Fan, High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films, Appl. Surf. Sci., 2008, 254: 6554-6559.
[36]Cheng Xu, Jianyong Ma, Yunxia Jin, Hongbo He, Jianda Shao, Zhengxiu Fan, Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films, Chin. Phys. Lett., 2008, 25: 1321-1324.
[37]Cheng Xu, Xiao Li, Hongcheng Dong, Yunxia Jin, Jianda Shao, Zhengxiu Fan, Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases, Chin. Phys. Lett., 2008, 25: 3300-3303.
[38]Cheng Xu, Dawei Li, Jianyong Ma, Yunxia Jin, Jianda Shao, Zhengxiu Fan, Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films, Opt. Laser Technol., 2008, 40: 545-549.
[39]Cheng Xu, Hongcheng Dong, Jianyong Ma, Yunxia Jin, Jianda Shao, Zhengxiu Fan, Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films, Chin. Opt. Lett., 2008, 6: 228-230.
[40]Cheng Xu, Jianke Yao, Jianyong Ma, Yunxia Jin, Jianda Shao, Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800 and 1064 nm, Chin. Opt. Lett., 2007, 12(5): 727-729.
代表性專(zhuān)利：
[1]     許程，蔡文哲，楊應田，李大偉，一種具有高激光損傷閾值的耐高溫氧化鈮薄膜制備方法，中國發(fā)明專(zhuān)利，公開(kāi)號：CN110330236B，專(zhuān)利授權號：ZL201910640397.3。 (授權公告日：2021.08.31)
[2]     許程，朱永巧，蔡文哲，李大偉，一種具有高激光損傷閾值的激光薄膜的制備方法，中國發(fā)明專(zhuān)利，公開(kāi)號：CN110512180B，專(zhuān)利授權號：ZL201910856198.6。 (授權公告日：2021.04.13)
[3]     許程，楊帥，馬浩，王吉飛，郭立童，張含卓，尹詩(shī)斌，李大偉，強穎懷，劉炯天，高溫環(huán)境下具有高激光損傷閾值氧化鉭薄膜的制備方法，中國發(fā)明專(zhuān)利，申請號：201210084926.4。公開(kāi)號：CN102605333A，專(zhuān)利授權號：ZL201210084926.4。 (授權公告日：2013.11.27)
[4]     許程，楊帥，義鵬，郭立童，張含卓，尹詩(shī)斌，李大偉，強穎懷，劉炯天，高溫環(huán)境下激光輻照光學(xué)薄膜損傷閾值測量裝置和方法，中國發(fā)明專(zhuān)利，申請號：201210079348.5。公開(kāi)號：CN102608019A。
[5]     許程，楊帥，義鵬，郭立童，張含卓，尹詩(shī)斌，李大偉，強穎懷，劉炯天，高溫環(huán)境下激光輻照光學(xué)薄膜損傷閾值測量裝置，實(shí)用新型專(zhuān)利，申請號：201220113289.4，公開(kāi)號：CN202502035U，專(zhuān)利授權號：ZL201220113289.4。(授權公告日：2012.10.24)
[6]     許程，強穎懷，劉炯天，太陽(yáng)能電池光陽(yáng)極用二氧化鈦基納米晶的低溫合成方法，中國發(fā)明專(zhuān)利，申請號：201110178007.9。公開(kāi)號：CN102275985A，專(zhuān)利授權號：ZL201110178007.9。(授權公告日：2013.7.3)
[7]     許程，強穎懷，鐘耀東，李玲玲，韓慧，陳眾，劉炯天，低溫兩步法制備復合銳鈦礦型二氧化鈦可見(jiàn)光催化劑，中國發(fā)明專(zhuān)利，申請號：201110282801.8，公開(kāi)號：CN102500426A，專(zhuān)利授權號：ZL201110282801.8。(授權公告日：2013.8.21)
[8]     許程，強穎懷，朱亞波，張生輝，鐘耀東，許林敏，劉炯天，微波輔助反應增壓法低溫制備摻雜型晶態(tài)二氧化鈦光電極，中國發(fā)明專(zhuān)利，申請號：201110282777.8。公開(kāi)號：CN102354605A，專(zhuān)利授權號：ZL20111028277.8。(授權公告日：2013.4.3)